? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c70a i dm t c = 25 c, pulse width limited by t jm 280 a i ar t c = 25 c70a e ar t c = 25 c60mj e as t c = 25 c 5.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1ma 600 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = 30 v, v ds = 0 200 na i dss v ds = v dss t j = 25 c 50 a v gs = 0 v t j = 125 c3 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 80 m ? note 1 ds99006(02/03) plus 264 tm (ixfb) g = gate d = drain s = source tab = drain s g d (tab) hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr features double metal process for low gate resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect fast intrinsic rectifier applications dc-dc converters switched-mode and resonant-mode power supplies, >500khz switching dc choppers pulse generation laser drivers advantages plus 264 tm package for clip or spring mounting space savings high power density ixfb 70n60q2 v dss = 600 v i d25 = 70 a r ds(on) = 80 m ? ? ? ? ? t rr 250 ns advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXFB70N60Q2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 note 1 36 50 s c iss 7200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1300 pf c rss 290 pf t d(on) 26 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 25 ns t d(off) r g = 1 ? (external) 60 ns t f 12 ns q g(on) 265 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 57 nc q gd 120 nc r thjc 0.14 k/w r thck 0.13 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 70 a i sm repetitive; 280 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 1.2 c i rm 8a i f = 25a -di/dt = 100 a/ s v r = 100 v plus 264 tm outline note: 1. pulse test, t 300 s, duty cycle d 2 % terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector)
? 2003 ixys all rights reserved IXFB70N60Q2 fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 100 120 140 0 4 8 121620 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 5v 6v fig. 3. output characteristics @ 125 deg. c 0 20 40 60 80 0 3 6 9 12 15 18 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 1. output characteristics @ 25 deg. c 0 20 40 60 80 0246810 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4 . r ds(on) normalized to i d25 v alue vs. junction temperature 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized i d = 70a i d = 35a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5 . r ds(on) normalized to i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 0 30 60 90 120 150 i d - amperes r ds(on) - normalized t j = 125 o c t j = 25 o c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXFB70N60Q2 fig. 7. input admittance 0 15 30 45 60 75 90 3 3.5 4 4.5 5 5.5 6 6.5 v gs - v olts i d - amperes t j = -40 o c 25 o c 125 o c fig. 8. transconductance 0 20 40 60 80 100 0 153045 607590105120 i d - am peres g fs - siemens t j = 25 o c t j = 125 o c t j = -40 o c fig. 9. source current vs. source-to- drain voltage -200 -160 -120 -80 -40 0 -1.4 -1.2 -1 -0.8 -0.6 -0.4 v sd - volts i s - amperes t j = 125 o c t j = 25 o c fig. 10. gate charge 0 2 4 6 8 10 0 40 80 120 160 200 240 280 q g - nanocoulom bs v gs - volts v ds = 300v i d = 35a i g = 10ma fig. 11. capacitance 100 1000 10000 010203040 v ds - v olts capacitance - pf cis s cos s crs s f=1mhz fig. 12. maxim um transient therm al resistance 0.01 0.1 1 1 10 100 1000 puls e width - m illis e conds r (th)jc - (oc/w)
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